8050 NPN General Purpose Transistor
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 20V |
| Collector−Base Voltage (VCBO) | 30V |
| Continuous Collector Current (Ic) | 700mA |
| Emitter Base Voltage (VEBO) | 5V |
| Operating Temperature Range | -65 - 150°C |
| DC Current Gain (hFE) | 120-400 |
| Current Gain Bandwidth (fT) | 100MHz |
| Output Capacitance (Cob) | 9pF |
S8050 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle
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